?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com fmbm5551 rev. c fmbm5551 npn general purpose amplifier supersot-6 surface mount package january 2005 fmbm5551 npn general purpose amplifier supersot-6 surface mount package features ? this device has matched dies ? sourced from process 16. ? see mmbt5551 for characteristics absolute maximum ratings * * pd total, for both transistors. for each transistor, pd = 350mw electrical characteristics t c = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 160 v v cbo collector-base voltage 180 v v ebo emitter-base voltage 6 v i c collector current (dc) 600 ma p c collector dissipation (t c = 25 c) 0.7 w t j junction temperature 150 c t stg storage temperature range -55 ~ 150 c t ja thermal resistance, junction to ambient 180 c/w symbol parameter conditions min. max units off characteristics bv ceo collector-emitter voltage i c = 1ma, i b = 0 160 v bv cbo collector-base voltage i c = 100 a, i e = 0 180 v bv ebo emitter-base voltage i c = 10 a, i c = 0 6 v i cbo collector cut-off current v cb = 120v v cb = 120v, t a = 100 c 50 50 na a i ebo emitter cut-off current v eb = 10v 50 na on characteristics h fe1 dc current gain v ce = 5v, i c = 1ma 80 divid1 variation ratio of h fe1 between die 1 and die 2 h fe1 (die1)/h fe1 (die2) 0.9 1.1 h fe2 dc current gain v ce = 5v, i c = 10ma 80 250 divid2 variation ratio of h fe2 between die 1 and die 2 h fe2 (die1)/h fe2 (die2) 0.95 1.05 c1 e1 c2 b1 e2 b2 supersot tm -6 mark: .3s2 pin #1 dot denotes pin #1
2 www.fairchildsemi.com fmbm5551 rev. c fmbm5551 npn general purpose amplifier supersot-6 surface mount package electrical characteristics ( continued) t c = 25c unless otherwise noted symbol parameter conditions min. max units h fe3 dc current gain v ce = 5v, i c = 50ma 30 divid3 variation ratio of h fe3 between die 1 and die 2 h fe3 (die1)/h fe3 (die2) 0.9 1.1 v ce(sat) collector-emitter saturation voltage i c = 10ma, i b = 1ma i c = 50ma, i b = 5ma 0.15 0.2 v v v be(sat) base-emitter saturation voltage i c = 10ma, i b = 1ma i c = 50ma, i b = 5ma 1 1 v v v be(on) base-emitter on voltage v ce = 5v, i c = 10ma 1 v del difference of v be(on) between die1 and die 2 v be(on) (die1)-v be(on) (die2) -8 8 mv small signal characteristics c ob output capacitance v cb = 10v, f = 1mhz 6 pf c ib input capacitance v cb = 0.5v, f = 1mhz 20 pf f t current gain bandwidth product v ce = 10v, i c = 10ma, f = 100mhz 100 300 mhz nf noise figure v ce = 5v, i c = 200 a, f = 1mhz, r s = 20k ? , b = 200hz 8db h fe small signal current gain v ce = 10v, i c = 1.0ma, f = 1.0khz 50 250
3 www.fairchildsemi.com fmbm5551 rev. c fmbm5551 npn general purpose amplifier supersot-6 surface mount package mechanical dimensions supersot tm -6 dimensions in millimeters
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